作者：Zhao, Bei; Zhang, Zucheng; Xu, Junqing; Guo, Dingli; Gu, Tiancheng; He, Guiming; Lu, Ping; He, Kun; Li, Jia; Chen, Zhao; Ren, Quan; Miao, Lin; Lu, Junpeng; Ni, Zhenhua; Duan, Xiangfeng; Duan, Xidong
作者单位：Hunan University; Southeast University - China; Southeast University - China; Hefei University of Technology; Southeast University - China; University of California System; University of California Los Angeles
摘要：Tailoring carrier density in atomically thin two-dimensional (2D) semiconductors is challenging because of the inherently limited physical space for incorporating charge dopants. Here, we report that interlayer charge-transfer doping in type III van der Waals heterostructures can be greatly modulated by an external gate to realize a hyperdoping effect. Systematic gated-Hall measurements revealed that the modulated carrier density is about five times that of the gate capacitive charge, achievin...
作者：Gerke, Sara; Simon, David A.
作者单位：University of Illinois System; University of Illinois Urbana-Champaign; University of Illinois System; University of Illinois Urbana-Champaign; Northeastern University
作者：Xames, M. D. Doulotuzzaman
作者单位：Virginia Polytechnic Institute & State University
