Gate-driven band modulation hyperdoping for high-performance p-type 2D semiconductor transistors

• 成果类型: Article
• 署名作者: Zhao, Bei; Zhang, Zucheng; Xu, Junqing; Guo, Dingli; Gu, Tiancheng; He, Guiming; Lu, Ping; He, Kun; Li, Jia; Chen, Zhao; Ren, Quan; Miao, Lin; Lu, Junpeng; Ni, Zhenhua; Duan, Xiangfeng; Duan, Xidong
• 署名单位: Hunan University; Southeast University - China; Southeast University - China; Hefei University of Technology; Southeast University - China; University of California System; University of California Los Angeles
• 刊物名称: SCIENCE
• ISSN/ISSBN: 0036-13565
• DOI: 10.1126/science.adp8444
• 发表日期: 2025-06-12
• 页码: 1183-1188
• 关键词: field-effect transistors; mos2 transistors; contact resistance; monolayer mos2; wse2; mobility; limit; insulators; ws2; bn

摘要

Tailoring carrier density in atomically thin two-dimensional (2D) semiconductors is challenging because of the inherently limited physical space for incorporating charge dopants. Here, we report that interlayer charge-transfer doping in type III van der Waals heterostructures can be greatly modulated by an external gate to realize a hyperdoping effect. Systematic gated-Hall measurements revealed that the modulated carrier density is about five times that of the gate capacitive charge, achieving an ultrahigh 2D hole density of 1.49 x 10(14) per square centimeter, far exceeding the maximum possible electrostatic doping limit imposed by typical dielectric breakdown. The highly efficient hole-doping enables high-performance p-type 2D transistors with an ultralow contact resistance of similar to 0.041 kilohm micrometers and a record-high ON-state current density of similar to 2.30 milliamperes per micrometer.