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作者:Perica, Karlo; Kotchetkov, Ivan S.; Mansilla-Soto, Jorge; Ehrich, Fiona; Herrera, Kevin; Shi, Yuzhe; Dobrin, Anton; Gonen, Mithat; Sadelain, Michel
作者单位:Memorial Sloan Kettering Cancer Center; Memorial Sloan Kettering Cancer Center; Memorial Sloan Kettering Cancer Center; Memorial Sloan Kettering Cancer Center; H Lee Moffitt Cancer Center & Research Institute; Columbia University
摘要:Autologous chimeric antigen receptor (CAR) T cells are a genetically engineered therapy that is highly effective against B cell malignancies and multiple myeloma1. However, the length and cost of personalized manufacturing limits access and leaves patients vulnerable to disease progression. Allogeneic cell therapies have the potential to increase patient access and improve treatment outcomes but are limited by immune rejection2,3. To devise a strategy to protect allogeneic CAR T cells from hos...
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作者:Lanza, Mario; Pazos, Sebastian; Aguirre, Fernando; Sebastian, Abu; Le Gallo, Manuel; Alam, Syed M.; Ikegawa, Sumio; Yang, J. Joshua; Vianello, Elisa; Chang, Meng-Fan; Molas, Gabriel; Naveh, Ishai; Ielmini, Daniele; Liu, Ming; Roldan, Juan B.
作者单位:National University of Singapore; Institute for Functional Intelligent Materials (I-FIM); National University of Singapore; National University of Singapore; King Abdullah University of Science & Technology; International Business Machines (IBM); IBM Switzerland; University of Southern California; Communaute Universite Grenoble Alpes; Universite Grenoble Alpes (UGA); CEA; National Tsing Hua University; Polytechnic University of Milan; Chinese Academy of Sciences; Institute of Microelectronics, CAS; University of Granada
摘要:The semiconductor industry is experiencing an accelerated transformation to overcome the scaling limits of the transistor and to adapt to new requirements in terms of data storage and computation, especially driven by artificial intelligence applications and the Internet of Things. In this process, new materials, devices, integration strategies and system architectures are being developed and optimized. Among them, memristive devices and circuits-memristors are two-terminal memory devices that...
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作者:Chopra, Pradeep; Ray, Sean D.; Page, Caroline K.; Shepard, Justin D.; Kandeil, Ahmed; Jeevan, Trushar; Bowman, Andrew S.; Ellebedy, Ali H.; Webby, Richard J.; de Vries, Robert P.; Tompkins, S. Mark; Boons, Geert-Jan
作者单位:University System of Georgia; University of Georgia; University System of Georgia; University of Georgia; University System of Georgia; University of Georgia; University System of Georgia; University of Georgia; St Jude Children's Research Hospital; University System of Ohio; Ohio State University; Washington University (WUSTL); Washington University (WUSTL); Washington University (WUSTL); Utrecht University; University System of Georgia; University of Georgia
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作者:Drew, Liam
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作者:Martinez-Alvarez, Laura; Stickel, Dominic; Salegi-Diez, Andrea; Bhoobalan-Chitty, Yuvaraj; Shen, Wen Zhong; Peng, Xu
作者单位:University of Copenhagen; Yangzhou University
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作者:Russell, Sara
作者单位:Natural History Museum London
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作者:Ao, Mingrui; Zhou, Xiucheng; Kong, Xinjie; Gou, Saifei; Chen, Sifan; Dong, Xiangqi; Zhu, Yuxuan; Sun, Qicheng; Zhang, Zhejia; Zhang, Jinshu; Zhang, Qiran; Hu, Yan; Sheng, Chuming; Wang, Kaixuan; Wang, Shuiyuan; Wan, Jing; Han, Jun; Bao, Wenzhong; Zhou, Peng
作者单位:Fudan University
摘要:Recently the quest for post-silicon semiconductors has escalated owing to the inherent limitations of conventional bulk semiconductors, which are plagued by issues such as drain-induced barrier lowering, interfacial-scattering-induced mobility degradation and a constrained current on/off ratio determined by semiconductor bandwidth. These challenges have prompted the search for more advanced materials, with atomic-layer-thick two-dimensional (2D) semiconductors emerging as a potential solution....
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作者:Eisenstein, Michael
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作者:Lanier, Jaron
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作者:Orben, Amy
作者单位:University of Cambridge