Tunnel field-effect transistors exhibiting performance beyond the Boltzmann thermionic limit

• 成果类型: Article
• 署名作者: Wu, Zehan; Yang, Ke; Meng, Wanqing; Wang, Weizhen; Zhao, Yifei; Yang, Fumei; Ding, Ran; Li, Hui; Peng, Yudong; Yang, Zongmeng; Ang, Yee Sin; Cai, Songhua; Yang, Ming; Wang, Jiannong; Li, Lain-Jong; Hao, Jianhua
• 署名单位: Hong Kong Polytechnic University; National University of Singapore; Hong Kong University of Science & Technology; Peking University; Singapore University of Technology & Design
• 刊物名称: SCIENCE
• ISSN/ISSBN: 0036-8075; 1095-9203
• DOI: 10.1126/science.adx6059
• 发表日期: 2026-08-27
• 页码: 917-922
• 关键词: total-energy calculations; BI NANOSHEETS; semiconductors; thickness; semimetal; black; inse

摘要

The International Roadmap for Devices and Systems (IRDS) has identified the tunnel field-effect transistor (TFET) as the most promising next-generation logic device that enables sustainable downscaling in driving voltage and power consumption. Demonstrating an acceptable sub-Boltzmann-limit ON current (namely I60, the current level when a TFET switches to a subthreshold swing level of 60 millivolts per decade) and current-switching ratio has presented a formidable challenge. We report a TFET based on a bismuth/indium selenide (Bi/InSe) heterostructure that exhibits an I60 of up to similar to 10 microamperes per micrometer and a current-switching ratio of >107. We attribute such promising TFETs to precise material design, clean interfaces fabricated under vacuum, and band engineering based on subthreshold swing physics. Our results demonstrate a high-performance basic building block that meets the IRDS requirements for next-generation integrated circuits.