High-temperature memristors enabled by interfacial engineering

• 成果类型: Article
• 署名作者: Zhao, Jian; Jorgensen, Cameron S.; Mahalingam, Krishnamurthy; Bowers, Cynthia; Sugimoto, Wataru; Ito, Kai; Kim, Seung Ju; Zhao, Ruoyu; Xu, Yichun; Liao, Han-Ting; Kalia, Rajiv K.; Nakano, Aiichiro; Shimamura, Kohei; Shimojo, Fuyuki; Vashishta, Priya; Roy, Ajit K.; Ge, Ning; Hu, Miao; Williams, R. Stanley; Xia, Qiangfei; Ganguli, Sabyasachi; Yang, J. Joshua
• 署名单位: University of Southern California; Kumamoto University; University of Southern California; University of Massachusetts System; University of Massachusetts Amherst
• 刊物名称: SCIENCE
• ISSN/ISSBN: 0036-8075; 1095-9203
• DOI: 10.1126/science.aeb9934
• 发表日期: 2026-05-14
• 页码: 771-779
• 关键词: 2-dimensional materials; molecular-dynamics; memory; integration; mechanisms; graphene; devices; uniform; films

摘要

Nonvolatile memories (NVMs) that operate reliably at high temperatures are essential for electronics in extreme environments. Here, we report graphene (Gra)/HfOx/tungsten (W) memristors that operated reliably up to 700 degrees C, with an ON/OFF current ratio of >10(3), data retention >50 hours, and endurance >10(9) switching cycles. Transmission electron microscopy revealed substantial W diffusion into the inert platinum (Pt) electrode in conventional Pt/HfOx/W memristors after high-temperature annealing, which was responsible for the thermal failure in conventional devices but not observed in Gra/HfOx/W devices. First-principles calculations attributed the enhanced thermal stability to weaker W adsorption and higher surface diffusion barriers on Gra compared with metals such as Pt. These results underscore the critical role of interfacial engineering and the potential of two-dimensional materials for enabling reliable high-temperature NVM technologies.