Highly efficient, deep-ultraviolet luminescence in hBN moiré quantum wells

• 成果类型: Article
• 署名作者: Hong, Chengyun; Zhao, Fangzhou; Song, Su-Beom; Yoon, Sangho; Jeon, Seong-Joon; Khan, M. Ajmal; Tao, Ye; Yang, Dong-Hwan; Lee, Wanhee; Kim, Junho; Yang, Sera; Cho, Hyungseob; Lee, Sumin; Min, Seok Young; Watanabe, Kenji; Taniguchi, Takashi; Yoo, Seunghyup; Cho, Changsoon; Choi, Si-Young; Hirayama, Hideki; Xian, Lede; Jo, Moon-Ho; Rubio, Angel; Kim, Jonghwan
• 署名单位: Institute for Basic Science - Korea (IBS); Pohang University of Science & Technology (POSTECH); Max Planck Society; RIKEN; Korea Advanced Institute of Science & Technology (KAIST); National Institute for Materials Science; National Institute for Materials Science; Pohang University of Science & Technology (POSTECH); Songshan Lake Materials Laboratory; Pohang University of Science & Technology (POSTECH); Simons Foundation; Flatiron Institute; Simons Foundation; Flatiron Institute
• 刊物名称: SCIENCE
• ISSN/ISSBN: 0036-8075; 1095-9203
• DOI: 10.1126/science.aeb2095
• 发表日期: 2026-03-19
• 页码: eaeb2095
• 关键词: hexagonal boron-nitride; optical-properties; QUASI-PARTICLE; alloys

摘要

Twisted stacking of two-dimensional van der Waals (vdW) semiconductors creates moir & eacute; superlattices, which provides unprecedented control over quantum states and their light-matter interactions. We demonstrate that a simple twist interface between two single-crystalline bulks of hexagonal boron nitride (hBN) creates moir & eacute; quantum wells (QWs) embedded in a three-dimensional vdW structure. hBN moir & eacute; QWs strongly confine charge carriers under both optical excitation and electrical injection. Despite their indirect bandgap, they emit intense deep-ultraviolet luminescence in the extreme wavelength bands from 215 to 240 nanometers, exceeding that of state-of-the-art conventional aluminum gallium nitride (AlGaN) multiple QWs by more than an order of magnitude. Furthermore, the twist angle control allows wide tunability of luminescence energy and efficiency in moir & eacute; QWs.