Solving the ferroelectric scaling trilemma: A robust oxide ferroelectric-semiconductor interface realizes an energy-efficient memory for computing

成果类型:
Editorial Material
署名作者:
Behera, Piush; Cheema, Suraj S.
署名单位:
Massachusetts Institute of Technology (MIT); Massachusetts Institute of Technology (MIT); Massachusetts Institute of Technology (MIT)
刊物名称:
SCIENCE
ISSN/ISSBN:
0036-8075; 1095-9203
DOI:
10.1126/science.aee4597
发表日期:
2026-01-29
页码:
445-446
关键词:
films
来源URL: