Surface-dominant transport in Weyl semimetal NbAs nanowires for next-generation interconnects

• 成果类型: Article
• 署名作者: Cheon, Yeryun; Kiani, Mehrdad T.; Tu, Yi-Hsin; Kumar, Sushant; Duong, Nghiep Khoan; Kim, Jiyoung; Kong, Lingcheng; Sam, Quynh P.; Wang, Han; Kushwaha, Satya K.; Ng, Nicholas; Lee, Seng Huat; Kielar, Sam; Li, Chen; Schaeffer, Amelia; Coyle, Jack D.; Koumoulis, Dimitrios; Siddique, Saif; Mao, Zhiqiang; Jin, Gangtae; Tian, Zhiting; Sundararaman, Ravishankar; Lin, Hsin; Liang, Gengchiau; Chen, Ching-Tzu; Cha, Judy J.
• 署名单位: Cornell University; Cornell University; National Yang Ming Chiao Tung University; International Business Machines (IBM); IBM USA; Cornell University; Johns Hopkins University; Pennsylvania Commonwealth System of Higher Education (PCSHE); Pennsylvania State University; Pennsylvania State University - University Park; Cornell University; Cornell University; Gachon University; Rensselaer Polytechnic Institute; Academia Sinica - Taiwan; International Business Machines (IBM); IBM USA
• 刊物名称: SCIENCE
• ISSN/ISSBN: 0036-8075; 1095-9203
• DOI: 10.1126/science.adx3027
• 发表日期: 2026-07-16
• 页码: 272-279
• 关键词: thermal-conductivity; current-density; magnetoresistance; integration; NBP

摘要

Ongoing demands for smaller and more energy-efficient electronic devices necessitate alternative interconnect materials with lower electrical resistivity at reduced dimensions. We report the synthesis of Weyl semimetal niobium arsenide (NbAs) nanowires through thermomechanical nanomolding with single crystallinity and controlled diameters down to 40 nanometers. The resistivity of NbAs nanowires decreases with decreasing diameter, and 40-nanometer-diameter nanowires exhibited a room-temperature resistivity of 10.5 +/- 1.9 microhm & centerdot;centimeters, which is similar to 70% lower than their bulk counterpart. Calculations attribute this resistivity reduction to surface-dominant conduction with a long carrier lifetime at finite temperatures. Further characterization of nanowires and bulk crystals revealed high breakdown current density, stability, and thermal conductivity. These properties highlight the potential of NbAs nanowires as next-generation interconnects that could surpass the limitations of current copper-based interconnects.