Step geometry-guided growth of rhombohedral graphene

• 成果类型: Article
• 署名作者: Zhao, Mengze; Zhang, Zhibin; Sui, Xin; Guo, Quanlin; Qian, Cheng; Zhang, Zaizhe; Xiao, Hanbo; Zhu, Jingyi; Feng, Zuo; You, Yilong; Dong, Tianze; Li, Xin-Zheng; Wang, Sheng; Wang, Li; Wang, Enge; Ding, Feng; Liu, Zhongkai; Lu, Xiaobo; Liu, Kaihui
• 署名单位: Peking University; Peking University; Peking University; Tsinghua University; Peking University; Collaborative Innovation Center of Quantum Matter; Suzhou Laboratory; ShanghaiTech University; Wuhan University; Chinese Academy of Sciences; Nanjing Institute of Geology & Paleontology, CAS; Institute of Physics, CAS; Songshan Lake Materials Laboratory
• 刊物名称: SCIENCE
• ISSN/ISSBN: 0036-8075; 1095-9203
• DOI: 10.1126/science.aed9202
• 发表日期: 2026-07-23
• 页码: 422-427
• 关键词: chern insulator; band-gap; epitaxy; ORDER

摘要

Rhombohedral (ABC)-stacked graphene has emerged as a platform for exploring correlated and topological physics. However, its large-scale, pure-phase synthesis has been hindered by intrinsic thermodynamic metastability and kinetic instability. In this work, we introduce a step geometry-guided epitaxial strategy to deterministically control interlayer slip, enabling the synthesis of pure-phase rhombohedral graphene. Using this approach, we obtained pure (phase purity > 99%) rhombohedral graphene with an area reaching 160 micrometers by 80 micrometers and thickness ranging from similar to 15 layers to similar to 120 nanometers. The resulting samples establish the first comprehensive reference dataset of Raman fingerprints and intrinsic band structures from few-layer films to similar to 200-layer bulk. Electronic transport measurements reveal a layer-antiferromagnetic state and the quantum anomalous Hall effect, enabling scalable exploration of next-generation quantum science and technology applications.