Kinetic acceleration of MoS2 growth by oxy-metal-organic chemical vapor deposition

• 成果类型: Article
• 署名作者: Liu, Lei; Wang, Yushu; Dong, Ruikang; Fan, Dongxu; Meng, Si; Wu, Lang; Wu, Shengqiang; Xu, Wei; Feng, Mingwei; Zou, Ningmu; Yan, Qingyu; Hu, Zehua; Lu, Fei; Zhu, Shitong; Gao, Yuan; Ma, Liang; Shi, Yi; Li, Taotao; Wang, Jinlan; Wang, Xinran
• 署名单位: Suzhou Laboratory; Nanjing University; Nanjing University; Nanjing University; Collaborative Innovation Center of Advanced Microstructures (CICAM); Nanjing University; Southeast University - China
• 刊物名称: SCIENCE
• ISSN/ISSBN: 0036-8075; 1095-9203
• DOI: 10.1126/science.aec7259
• 发表日期: 2026-01-29
• 页码: 494-498
• 关键词: CARBON-DISULFIDE; SULFURIZATION; film

摘要

Kinetics determine the growth behavior of thin films, particularly for atomically thin transition-metal dichalcogenides. Metal-organic (MO) chemical vapor deposition (CVD) offers promise for scalable growth, but the reactions are kinetically limited, leading to nanometer-scale domain size and carbon contaminations. Here, we unveil the fundamental kinetic limitations and overcome them by introducing oxygen-assisted MOCVD (oxy-MOCVD) technology. By tuning reactions with oxygen, MO precursors are converted into high-purity transition-metal oxides and chalcogens, producing aligned molybdenum disulfide (MoS2) domains with a size and growth rate that are orders of magnitude larger than conventional MOCVD. The MoS2 is free of carbon impurities and exhibits average mobility exceeding 100 square centimeters per volt per second. The scalability of oxy-MOCVD is demonstrated by 150-millimeter single-crystal MoS2 wafers, proving the feasibility of industrial-scale production.