Wafer-scale ultrathin and uniform van der Waals ferroelectric oxide

• 成果类型: Article
• 署名作者: Wu, Qinci; Li, Zhongrui; Han, Bingchen; Sun, Weiyu; Liu, Qinyun; Xue, Chengyuan; Bae, Hyeonhu; Wang, Mengdi; Fu, Boyang; Qian, Jun; Zhu, Yongchao; Sun, Yu; Feng, Tingkai; Gao, Xin; Cong, Xuzhong; Liu, Wanqing; Gao, Yunan; Yan, Binghai; Tan, Congwei; Liu, Hongtao; Peng, Hailin
• 署名单位: Peking University; Chinese Academy of Sciences; Peking University; Peking University; Peking University; Weizmann Institute of Science; Pennsylvania Commonwealth System of Higher Education (PCSHE); Pennsylvania State University; Pennsylvania State University - University Park
• 刊物名称: SCIENCE
• ISSN/ISSBN: 0036-8075; 1095-9203
• DOI: 10.1126/science.adz1655
• 发表日期: 2026-01-29
• 页码: eadz1655
• 关键词: field-effect transistors; HIGH-ENDURANCE; thin-films; LOW-POWER; POLY(VINYLIDENE FLUORIDE); SCALABLE NONVOLATILE; PHASE-TRANSITION; LONG-RETENTION; memory; temperature

摘要

Ferroelectrics have great potential for nonvolatile memory and next-generation electronics, but conventional ferroelectric oxide films generally suffer structural nonuniformity, interfacial depolarization, and performance degradation, particularly when downscaled to advanced technology nodes. We demonstrate uniform, wafer-scale synthesis and back-end-of-line-compatible integration of ultrathin van der Waals (vdW) high-dielectric constant ferroelectric oxide Bi2SeO5, retaining an optimal coercive field and robust ferroelectricity at monolayer thickness. Ultrathin vdW ferroelectric oxides formed atomically uniform interfaces with two-dimensional semiconductors and yielded ferroelectric field-effect transistor (FeFET) arrays with a low operating voltage (0.8 volts), exceptional cycling endurance (>1.5 x 10(12) cycles), fast write speed (20 nanoseconds), high on/off ratio (10(6)), 10-year retention, ultralow energy consumption (2.8 femtojoules per bit per square micrometer), and <5% device-to-device variation. Reconfigurable logic-in-memory circuits with these FeFETs function at supply voltages of <1 volt.