Picosecond ultralow-power switching device based on an antiferromagnet

• 成果类型: Article
• 署名作者: Tsai, Hanshen; Matsuda, Takuya; Kondou, Kouta; Shimizu, Kotaro; Nomoto, Takuya; Higo, Tomoya; Matsuo, Takumi; Tsushima, Yutaro; Asakura, Mihiro; Peng, Hanyi; Nishio-Hamane, Daisuke; Yamada, Shogo; Tang, Rui; Iizuka, Tetsuya; Miwa, Shinji; Arita, Ryotaro; Takenaka, Mitsuru; Nakatsuji, Satoru
• 署名单位: University of Tokyo; University of Osaka; Tokyo Metropolitan University; University of Tokyo; University of Tokyo; University of Tokyo; Johns Hopkins University; Johns Hopkins University
• 刊物名称: SCIENCE
• ISSN/ISSBN: 0036-8075; 1095-9203
• DOI: 10.1126/science.adt3136
• 发表日期: 2026-05-14
• 页码: 761-765
• 关键词: spin; domains

摘要

Developing an ultrafast and energy-efficient nonvolatile switching device may pose a strong impact on emerging computing architectures. However, processing speed has plateaued in the nanosecond regime, as further acceleration demands excessively large write power. We demonstrate ultralow power in picosecond switching using heterostructures of the antiferromagnet Mn3Sn and heavy metal tantalum, which exhibit spin-orbit torque switching by electrical pulses as short as 40 picoseconds. Power consumption in the picosecond regime is several orders of magnitude lower than in ferromagnetic counterparts owing to efficient angular momentum transfer. Compared with previously reported picosecond switching devices, our ultralow-power switching device realizes much less heating, higher endurance, and switching using photocurrent. These results pave the way to ultrafast nonvolatile memory and efficient optical-to-electrical conversion technology.