Promoter-driven recrystallization affording highly textured ruthenium

• 成果类型: Article
• 署名作者: Leem, Youngchul; Ha, Yoonhoo; Lee, Young-Min; Jo, Yong-Ryun; Lee, Jeong Yub; Cho, Eun-Hyoung; Chae, Byeong-Gyu; Lee, Jaewoo; Jo, Gi-Young; Park, Seong Yong; Byun, Kyung-Eun; Kim, Jeehwan; Kim, Sang Won
• 署名单位: Gwangju Institute of Science & Technology (GIST); Samsung; Massachusetts Institute of Technology (MIT); Massachusetts Institute of Technology (MIT)
• 刊物名称: SCIENCE
• ISSN/ISSBN: 0036-8075; 1095-9203
• DOI: 10.1126/science.ady9591
• 发表日期: 2026-08-13
• 页码: 702-707
• 关键词: grain-boundaries; ultrasoft pseudopotentials; carbon; fcc; 1st-principles; migration; BCC; HCP

摘要

The electrical properties of polycrystalline materials are governed by crystallite characteristics and spatial arrangement. We grew ruthenium polycrystals with a near-complete out-of-plane preferred orientation and predominantly low-energy grain boundaries on amorphous dielectric substrates, without relying on epitaxial growth or lattice-matched conditions. Whereas prior studies used high-density, high-quality polycrystalline materials derived from high-purity sources, we exploited trace carbon as a transient promoter at grain boundaries, revealing that it generated transient free volume during recrystallization and thus facilitated atomic migration, driving the dynamic vertical and horizontal orientation of grains. Our findings provide microscopic insights into the engineering of grain boundary kinetics through controlled trace element incorporation. The developed strategy is applicable to other polycrystalline materials, offering versatility for advanced material design and applications.