Intelligent self- correcting growth of uniform Bernal- stacked bi- /trilayer graphene
成果类型：
Article
署名作者：
Ma, Wei; Ma, Lai - Peng; Kong, Xiao; Yan, Han; Liu, Zhibo; Han, Tiannan; Zhu, Chao; Cheng, Hui - Ming; Liu, Zheng; Ding, Feng; Ren, Wencai
署名单位：
Chinese Academy of Sciences; Institute of Metal Research, CAS; Chinese Academy of Sciences; University of Science & Technology of China, CAS; Nanyang Technological University; Chinese Academy of Sciences; Shanghai Institute of Microsystem & Information Technology, CAS; Chinese Academy of Sciences; Shenzhen Institute of Advanced Technology, CAS; National University of Singapore; Institute for Functional Intelligent Materials (I-FIM); Suzhou Laboratory
刊物名称：
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
ISSN/ISSBN：
0027-14064
DOI：
10.1073/pnas.2419968122
发表日期：
2025-05-06
关键词：
chemical-vapor-deposition
total-energy calculations
epitaxy
van
摘要：
State- of- the- art synthesis strategies of two- dimensional (2D) materials have been designed following the nucleation- dominant pattern for structure control. However, this classical methodology fails to achieve the precise layer- and stacking- resolved growth of wafer- scale few- layer 2D materials due to its intrinsically low energy resolution. Here, we present an intelligent self- correcting method for the high- resolution growth of uniform few- layer graphene. We demonstrate the layer- resolved growth of wafer- scale bilayer and trilayer graphene (BLG and TLG) with selective Bernal stacking through spontaneous correction of the single- layer graphene film with disordered multilayer by the stepwise energy minimization of the closed system and kinetically activated by forming a low- barrier pathway for the carbon detachment- diffusion- attachment. Such uniform Bernal- stacked BLG and TLG films show high quality with distinct quantum Hall effect being observed. Our work opens an avenue for developing an intelligent methodology to realize the precise synthesis of diverse 2D materials.