Modulation of electronic structure via dual moire patterns in twisted 1T-TaSe2
成果类型：
Article
署名作者：
Liu, Yonghao; Zheng, Yuan; Yang, Kun; Zhang, Wenhao; Wu, Zongxiu; Gao, Jingjing; Luo, Xuan; Sun, Yuping; Zhang, Jin; Yin, Yi
署名单位：
Zhejiang University; Chinese Academy of Sciences; Nanjing Institute of Geology & Paleontology, CAS; National Center for Nanoscience & Technology, CAS; Chinese Academy of Sciences; Hefei Institutes of Physical Science, CAS; Chinese Academy of Sciences; Hefei Institutes of Physical Science, CAS; Collaborative Innovation Center of Advanced Microstructures (CICAM); Nanjing University
刊物名称：
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
ISSN/ISSBN：
0027-8424; 1091-6490
DOI：
10.1073/pnas.2520703123
发表日期：
2026-03-17
页码：
e2520703123
关键词：
charge densitywave
mott insulator
moire control
scanning tunneling microscope
摘要：
We investigate a twisted bilayer of 1T-TaSe2 (twist angle < 4(degrees)) using scanning tunneling microscopy and spectroscopy, revealing that the coexisting twisted atomic lattice and charge density wave (CDW) superlattice generate a dual moire structure with distinct electronic modulation effects: The topographic moire pattern stems from atomic lattice twisting modulating CDW intensity, while the twisted CDW superlattice drives a continuous insulator-to-metal transition, as evidenced by electronic gap evolution from large to metallic states. Density functional theory calculations show this transition arises from twist-induced changes in star of David motif stacking. Using the moire -period gap map as the interlayer potential V(r), we construct a continuum model via its Fourier components V-G, finding that V-G mediates multiple interlayer scattering processes that produce numerous superposition states manifesting as split flat-band pairs with distinct energy gaps. This work elucidates a CDW-twist-based mechanism for electronic control in 1T-TaSe2 and provides insights into Mott physics and complex electronic phases in related materials.
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