Giant tunneling electroresistance in sliding ferroelectrics

• 成果类型: Article
• 署名作者: Wang, Yue; Zhao, Yu; Zhang, Yifei; Zhang, Liutianyi; Zhong, Zijian; Liu, Sishuo; Hou, Chentao; Liu, Fanxin; Zhang, Bin-Bin; Wei, Zhongming; Liu, Yue-Yang; Wang, Han; Tan, Ping-Heng; Wu, Jiangbin
• 署名单位: Chinese Academy of Sciences; Nanjing Institute of Geology & Paleontology, CAS; Institute of Semiconductors, CAS; Chinese Academy of Sciences; University of Chinese Academy of Sciences, CAS; University of Hong Kong; Zhejiang University of Technology; National University of Defense Technology - China; Zhangjiang Laboratory
• 刊物名称: SCIENCE
• ISSN/ISSBN: 0036-8075; 1095-9203
• DOI: 10.1126/science.aeh3697
• 发表日期: 2026-09-10
• 页码: 1139-1144
• 关键词: MNIST

摘要

Nonvolatile memories should store information reliably while consuming little energy. Ferroelectric tunnel junctions offer compact readout, but conventional ionic displacement ferroelectrics can fatigue, and two-dimensional sliding ferroelectrics are robust but generate weak readout in two terminal devices. We engineered a van der Waals junction using rhombohedral molybdenum disulfide, hexagonal boron nitride, monolayer graphene, and chromium. This architecture converts small sliding polarization into synergistic modulation of tunneling barrier height and carrier concentration. The devices showed tunneling electroresistance above 10 million, a high conductance state current density of 222 amperes per square centimeter at 0.5 volts, and an endurance beyond 100 billion cycles while switching with 13-nanosecond pulses at an estimated energy of 6.5 femtojoules, offering a route to compact low-power memory.