Giant enhancement of exciton diffusion near an electronic Mott insulator

• 成果类型: Article
• 署名作者: Upadhyay, Pranshoo; Suarez-Forero, Daniel G.; Huang, Tsung-Sheng; Mehrabad, Mahmoud Jalali; Gao, Beini; Sarkar, Supratik; Session, Deric; Watanabe, Kenji; Taniguchi, Takashi; Zhou, You; Knap, Michael; Hafezi, Mohammad
• 署名单位: University System of Maryland; University of Maryland College Park; University of Geneva; National Institute for Materials Science; University System of Maryland; University of Maryland College Park; Technical University of Munich
• 刊物名称: SCIENCE
• ISSN/ISSBN: 0036-8075; 1095-9203
• DOI: 10.1126/science.ads5266
• 发表日期: 2026-01-22
• 页码: 394-398
• 关键词: moire; transport; STATES

摘要

Bose-Fermi mixtures can be realized in semiconductor heterostructures, with bosons as excitons and fermions as dopant charges. However, the complexity of these hybrid systems challenges understanding of the mechanisms that determine properties such as mobility. We investigated interlayer exciton diffusion in tungsten diselenide-tungsten disulfide heterobilayers at ultralow exciton density and low temperatures to examine how charges affect exciton mobility. Near the electronic Mott insulator phase, we observed a giant thousand-fold enhancement of exciton diffusion relative to charge neutrality. We attribute this to mobile valence holes, which experienced a suppressed moir & eacute; potential due to charge order and recombined nonmonogamously with conduction electrons. Our results show exciton diffusion as a probe of correlated electron states and Bose-Fermi interplay.