Electronic diffusion in a normal state of high-Tc cuprate YBa2Cu3O6+x

• 成果类型: Article
• 署名作者: Kokalja, Jure
• 署名单位: Slovenian Academy of Sciences & Arts (SASA); Jozef Stefan Institute; University of Ljubljana
• 刊物名称: PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
• ISSN/ISSBN: 0027-15407
• DOI: 10.1073/pnas.2322670121
• 发表日期: 2024-03-19
• 关键词: thermal-conductivity; single-crystal; inplane

摘要

The bad metallic phase with resistivity above the Mott-Ioffe-Regel (MIR) limit, which appears also in cuprate superconductors, was recently understood by cold atom and computer simulations of the Hubbard model via charge susceptibility and charge diffusion constant. However, since reliable simulations can be typically done only at temperatures above the experimental temperatures, the question for cuprate superconductors is still open. This paper addresses this question by resorting to heat transport, which allows for the estimate of electronic diffusion and it further combines it with the resistivity to estimate the charge susceptibility. The doping and temperature dependencies of diffusion constant and charge susceptibilities are shown and discussed for two samples of YBa2Cu3O6+x. Results indicate strongly incoherent transport, mean free path corresponding to the MIR limit for the underdoped sample at temperatures above similar to 200 K and significant effect of the charge susceptibility on the resistivity.