Aqueous chemimemristor based on proton- permeable graphene membranes

• 成果类型: Article
• 署名作者: Wang, Yongkang; Seki, Takakazu; Gkoupidenis, Paschalis; Chen, Yunfei; Nagata, Yuki; Bonn, Mischa
• 署名单位: Southeast University - China; Max Planck Society
• 刊物名称: PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
• ISSN/ISSBN: 0027-14464
• DOI: 10.1073/pnas.2314347121
• 发表日期: 2024-02-06
• 关键词: synaptic plasticity; interfacial water; transport; memory; device; ph; fluorite

摘要

Memristive devices, electrical elements whose resistance depends on the history of applied electrical signals, are leading candidates for future data storage and neuromorphic computing. Memristive devices typically rely on solid - state technology, while aqueous memristive devices are crucial for biology- related applications such as next- generation brain- machine interfaces. Here, we report a simple graphene-based aqueous memristive device with long - term and tunable memory regulated by reversible voltage- induced interfacial acid - base equilibria enabled by selective proton permeation through the graphene. Surface- specific vibrational spectroscopy verifies that the memory of the graphene resistivity arises from the hysteretic proton permeation through the graphene, apparent from the reorganization of interfacial water at the graphene/water interface. The proton permeation alters the surface charge density on the CaF2 substrate of the graphene, affecting graphene's electron mobility, and giving rise to synapse - like resistivity dynamics. The results pave the way for developing experimentally straightforward and conceptually simple aqueous electrolyte - based neuromorphic iontronics using two- dimensional (2D) materials.