Gate-tunable subband degeneracy in semiconductor nanowires

• 成果类型: Article
• 署名作者: Wang, Yuhao; Song, Wenyu; Cao, Zhan; Yu, Zehao; Yang, Shuai; Li, Zonglin; Gao, Yichun; Li, Ruidong; Chen, Fangting; Geng, Zuhan; Yang, Lining; Xu, Jiaye; Wang, Zhaoyu; Zhang, Shan; Feng, Xiao; Wang, Tiantian; Zang, Yunyi; Li, Lin; Shang, Runan; Xue, Qi-Kun; Liu, Dong E.; He, Ke; Zhang, Hao
• 署名单位: Tsinghua University; Beijing Academy of Quantum Information Sciences; Hefei National Laboratory; Southern University of Science & Technology
• 刊物名称: PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
• ISSN/ISSBN: 0027-12346
• DOI: 10.1073/pnas.2406884121
• 发表日期: 2024-07-02
• 关键词: one-dimensional subbands; g-factor anisotropy; quantized conductance; point contacts

摘要

Degeneracy and symmetry have a profound relation in quantum systems. Here, we report gate -tunable subband degeneracy in PbTe nanowires with a nearly symmetric cross-sectional shape. The degeneracy is revealed in electron transport by the absence of a quantized plateau. Utilizing a dual gate design, we can apply an electric field to lift the degeneracy, reflected as emergence of the plateau. This degeneracy and its tunable lifting were challenging to observe in previous nanowire experiments, possibly due to disorder. Numerical simulations can qualitatively capture our observation, shedding light on device parameters for future applications.