Electroluminescent vertical tunneling junctions based on WSe 2 monolayer quantum emitter arrays: Exploring tunability with electric and magnetic fields

• 成果类型: Article
• 署名作者: Howarth, James; Vaklinova, Kristina; Grzeszczyk, Magdalena; Baldi, Giulio; Hague, Lee; Potemski, Marek; Novoselov, Kostya S.; Kozikov, Aleksey; Koperski, Maciej
• 署名单位: University of Manchester; National University of Singapore; Institute for Functional Intelligent Materials (I-FIM); National University of Singapore; Universite de Toulouse; Universite Toulouse III - Paul Sabatier; Centre National de la Recherche Scientifique (CNRS); Communaute Universite Grenoble Alpes; Universite Grenoble Alpes (UGA); Universite Federale Toulouse Midi-Pyrenees (ComUE); Institut National des Sciences Appliquees de Toulouse; Polish Academy of Sciences; Institute of High Pressure Physics of the Polish Academy of Sciences; National University of Singapore; Newcastle University - UK
• 刊物名称: PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
• ISSN/ISSBN: 0027-12105
• DOI: 10.1073/pnas.2401757121
• 发表日期: 2024-06-04
• 关键词: single-photon emitters; boron-nitride; light; generation; emission; dots

摘要

We experimentally demonstrate the creation of defects in monolayer WSe 2 via nanopillar imprinting and helium ion irradiation. Based on the first method, we realize atomically thin vertical tunneling light -emitting diodes based on WSe 2 monolayers hosting quantum emitters at deterministically specified locations. We characterize these emitters by investigating the evolution of their emission spectra in external electric and magnetic fields, as well as by inducing electroluminescence at low temperatures. We identify qualitatively different types of quantum emitters and classify them according to the dominant electron-hole recombination paths, determined by the mechanisms of intervalley mixing occurring in fundamental conduction and/or valence subbands.