Realizing one- dimensional moiré chains with strong electron localization in two- dimensional twisted bilayer WSe2

• 成果类型: Article
• 署名作者: Ren, Ya- Ning; Ren, Hui- Ying; Watanabe, Kenji; Taniguchi, Takashi; He, Lin
• 署名单位: Beijing Normal University; National Institute for Materials Science; National Institute for Materials Science
• 刊物名称: PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
• ISSN/ISSBN: 0027-9490
• DOI: 10.1073/pnas.2405582121
• 发表日期: 2024-11-05

摘要

Two- dimensional (2D) moir & eacute; systems based on twisted bilayer graphene and transition metal dichalcogenides provide a promising platform to investigate emergent phenomena driven by strong electron-electron interactions in partially filled flat bands. A natural question arises: Is it possible to expand the 2D correlated moir & eacute; physics to one- dimensional (1D) that electron-electron correlation is expected to be further enhanced? This requires selectively doping of 1D moir & eacute; chain, which seems to be not within the grasp of today's technology. Therefore, an experimental demonstration of the 1D moir & eacute; chain with partially filled electronic states remains absent. Here, we show that we can introduce 1D boundaries, separating two regions with different twist angles, in twisted bilayer WSe2 (tWSe2) by using scanning tunneling microscopy (STM) and demonstrate that the electronic states of 1D moir & eacute; sites along the boundaries can be selectively filled. The strong localized charge states of correlated moir & eacute; electrons in the 1D moir & eacute; chain can be directly imaged and manipulated by combining a back- gate voltage with the STM bias voltage. Our results open the door for realizing new correlated electronic states of the 1D moir & eacute; chain in 2D