A silicon diode-based optoelectronic interface for bidirectional neural modulation

• 成果类型: Article
• 署名作者: Fu, Xin; Hu, Zhengwei; Li, Wenjun; Ma, Liang; Chen, Junyu; Liu, Muyang; Liu, Jie; Hu, Shuhan; Wang, Huachun; Huang, Yunxiang; Tang, Guo; Zhang, Bozhen; Cai, Xue; Wang, Yuqi; Li, Lizhu; Ma, Jian; Shi, Song - Hai; Yin, Lan; Zhang, Hao; Li, Xiaojian; Sheng, Xing
• 署名单位: Tsinghua University; Tsinghua University; Chinese Academy of Sciences; Shenzhen Institute of Advanced Technology, CAS; Tsinghua University; Tsinghua University; Sun Yat Sen University
• 刊物名称: PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
• ISSN/ISSBN: 0027-9086
• DOI: 10.1073/pnas.2404164121
• 发表日期: 2024-07-23
• 关键词: deep brain-stimulation

摘要

The development of advanced neural modulation techniques is crucial to neuroscience research and neuroengineering applications. Recently, optical- based, nongenetic modulation approaches have been actively investigated to remotely interrogate the nervous system with high precision. Here, we show that a thin- film, silicon (Si)- based diode device is capable to bidirectionally regulate in vitro and in vivo neural activities upon adjusted illumination. When exposed to high- power and short- pulsed light, the Si diode generates photothermal effects, evoking neuron depolarization and enhancing intracellular calcium dynamics. Conversely, low- power and long- pulsed light on the Si diode mounted on the brain of living mice can activate or suppress cortical activities under varied irradiation conditions. The presented material and device strategies reveal an innovated optoelectronic interface for precise neural modulations.