Transonic dislocation propagation in diamond

• 成果类型: Article
• 署名作者: Katagiri, Kento; Pikuz, Tatiana; Fang, Lichao; Albertazzi, Bruno; Egashira, Shunsuke; Inubushi, Yuichi; Kamimura, Genki; Kodama, Ryosuke; Koenig, Michel; Kozioziemski, Bernard; Masaoka, Gooru; Miyanishi, Kohei; Nakamura, Hirotaka; Ota, Masato; Rigon, Gabriel; Sakawa, Youichi; Sano, Takayoshi; Schoofs, Frank; Smith, Zoe J.; Sueda, Keiichi; Togashi, Tadashi; Vinci, Tommaso; Wang, Yifan; Yabashi, Makina; Yabuuchi, Toshinori; Dresselhaus-Marais, Leora E.; Ozaki, Norimasa
• 署名单位: University of Osaka; University of Osaka; Stanford University; Stanford University; United States Department of Energy (DOE); SLAC National Accelerator Laboratory; Stanford University; University of Osaka; Institut Polytechnique de Paris; Ecole Polytechnique; CEA; Centre National de la Recherche Scientifique (CNRS); Sorbonne Universite; Japan Synchrotron Radiation Research Institute; RIKEN; United States Department of Energy (DOE); Lawrence Livermore National Laboratory; Nagoya University; UK Atomic Energy Authority; Culham Science Centre; Stanford University; Massachusetts Institute of Technology (MIT)
• 刊物名称: SCIENCE
• ISSN/ISSBN: 0036-13287
• DOI: 10.1126/science.adh5563
• 发表日期: 2023-10-06
• 页码: 69-72
• 关键词: shock-waves; amorphization; silicon; hyperelasticity; plasticity; BEHAVIOR; fracture; crystal; faster; cracks

摘要

The motion of line defects (dislocations) has been studied for more than 60 years, but the maximum speed at which they can move is unresolved. Recent models and atomistic simulations predict the existence of a limiting velocity of dislocation motion between the transonic and subsonic ranges at which the self-energy of dislocation diverges, though they do not deny the possibility of the transonic dislocations. We used femtosecond x-ray radiography to track ultrafast dislocation motion in shock-compressed single-crystal diamond. By visualizing stacking faults extending faster than the slowest sound wave speed of diamond, we show the evidence of partial dislocations at their leading edge moving transonically. Understanding the upper limit of dislocation mobility in crystals is essential to accurately model, predict, and control the mechanical properties of materials under extreme conditions.