Low voltage-driven high-performance thermal switching in antiferroelectric PbZrO3 thin films

• 成果类型: Article
• 署名作者: Liu, Chenhan; Si, Yangyang; Zhang, Hua; Wu, Chao; Deng, Shiqing; Dong, Yongqi; Li, Yijie; Zhuo, Meng; Fan, Ningbo; Xu, Bin; Lu, Ping; Zhang, Lifa; Lin, Xi; Liu, Xingjun; Yang, Juekuan; Luo, Zhenlin; Das, Sujit; Bellaiche, Laurent; Chen, Yunfei; Chen, Zuhuang
• 署名单位: Nanjing Normal University; Harbin Institute of Technology; Southeast University - China; University of Science & Technology Beijing; Chinese Academy of Sciences; University of Science & Technology of China, CAS; Soochow University - China; Nanjing Normal University; Indian Institute of Science (IISC) - Bangalore; University of Arkansas System; University of Arkansas Fayetteville; University of Arkansas System; University of Arkansas Fayetteville; Harbin Institute of Technology
• 刊物名称: SCIENCE
• ISSN/ISSBN: 0036-11657
• DOI: 10.1126/science.adj9669
• 发表日期: 2023-12-15
• 页码: 1265-1269
• 关键词: conductivity

摘要

Effective control of heat transfer is vital for energy saving and carbon emission reduction. In contrast to achievements in electrical conduction, active control of heat transfer is much more challenging. Ferroelectrics are promising candidates for thermal switching as a result of their tunable domain structures. However, switching ratios in ferroelectrics are low (<1.2). We report that high-quality antiferroelectric PbZrO3 epitaxial thin films exhibit high-contrast (>2.2), fast-speed (<150 nanoseconds), and long-lifetime (>10(7)) thermal switching under a small voltage (<10 V). In situ reciprocal space mapping and atomistic modelings reveal that the field-driven antiferroelectric-ferroelectric phase transition induces a substantial change of primitive cell size, which modulates phonon-phonon scattering phase space drastically and results in high switching ratio. These results advance the concept of thermal transport control in ferroic materials.