Developing fatigue-resistant ferroelectrics using interlayer sliding switching

• 成果类型: Article
• 署名作者: Bian, Renji; He, Ri; Pan, Er; Li, Zefen; Cao, Guiming; Meng, Peng; Chen, Jiangang; Liu, Qing; Zhong, Zhicheng; Li, Wenwu; Liu, Fucai
• 署名单位: University of Electronic Science & Technology of China; University of Electronic Science & Technology of China; Chinese Academy of Sciences; Chinese Academy of Sciences; Ningbo Institute of Materials Technology & Engineering, CAS; Chinese Academy of Sciences; University of Science & Technology of China, CAS; Chinese Academy of Sciences; University of Science & Technology of China, CAS; Fudan University; Fudan University; University of Electronic Science & Technology of China
• 刊物名称: SCIENCE
• ISSN/ISSBN: 0036-12216
• DOI: 10.1126/science.ado1744
• 发表日期: 2024-07-05
• 页码: 57-62
• 关键词: thin-films; high endurance; heterostructures; bilayer; gate

摘要

Ferroelectric materials have switchable electrical polarization that is appealing for high-density nonvolatile memories. However, inevitable fatigue hinders practical applications of these materials. Fatigue-free ferroelectric switching could dramatically improve the endurance of such devices. We report a fatigue-free ferroelectric system based on the sliding ferroelectricity of bilayer 3R molybdenum disulfide (3R-MoS2). The memory performance of this ferroelectric device does not show the wake-up effect at low cycles or a substantial fatigue effect after 106 switching cycles under different pulse widths. The total stress time of the device under an electric field is up to 105 s, which is long relative to other devices. Our theoretical calculations reveal that the fatigue-free feature of sliding ferroelectricity is due to the immobile charge defects in sliding ferroelectricity.