Ultrafast high-endurance memory based on sliding ferroelectrics

• 成果类型: Article
• 署名作者: Yasuda, Kenji; Zalys-Geller, Evan; Wang, Xirui; Bennett, Daniel; Cheema, Suraj S.; Watanabe, Kenji; Taniguchi, Takashi; Kaxiras, Efthimios; Jarillo-Herrero, Pablo; Ashoori, Raymond
• 署名单位: Massachusetts Institute of Technology (MIT); Cornell University; Harvard University; Massachusetts Institute of Technology (MIT); National Institute for Materials Science; National Institute for Materials Science; Harvard University
• 刊物名称: SCIENCE
• ISSN/ISSBN: 0036-11199
• DOI: 10.1126/science.adp3575
• 发表日期: 2024-07-05
• 页码: 53-56
• 关键词: layer

摘要

The persistence of voltage-switchable collective electronic phenomena down to the atomic scale has extensive implications for area- and energy-efficient electronics, especially in emerging nonvolatile memory technology. We investigate the performance of a ferroelectric field-effect transistor (FeFET) based on sliding ferroelectricity in bilayer boron nitride at room temperature. Sliding ferroelectricity represents a different form of atomically thin two-dimensional (2D) ferroelectrics, characterized by the switching of out-of-plane polarization through interlayer sliding motion. We examined the FeFET device employing monolayer graphene as the channel layer, which demonstrated ultrafast switching speeds on the nanosecond scale and high endurance exceeding 1011 switching cycles, comparable to state-of-the-art FeFET devices. These characteristics highlight the potential of 2D sliding ferroelectrics for inspiring next-generation nonvolatile memory technology.