Reductive pathways in molten inorganic salts enable colloidal synthesis of III-V semiconductor nanocrystals
成果类型:
Article
署名作者:
Ondry, Justin C.; Zhou, Zirui; Lin, Kailai; Gupta, Aritrajit; Chang, Jun Hyuk; Wu, Haoqi; Jeong, Ahhyun; Hammel, Benjamin F.; Wang, Di; Fry, H. Christopher; Yazdi, Sadegh; Dukovic, Gordana; Schaller, Richard D.; Rabani, Eran; Talapin, Dmitri V.
署名单位:
University of Chicago; University of Chicago; University of California System; University of California Berkeley; United States Department of Energy (DOE); Lawrence Berkeley National Laboratory; University of Colorado System; University of Colorado Boulder; United States Department of Energy (DOE); Argonne National Laboratory; University of Colorado System; University of Colorado Boulder; University of Colorado System; University of Colorado Boulder; Northwestern University; Tel Aviv University; University of Chicago
刊物名称:
SCIENCE
ISSN/ISSBN:
0036-10558
DOI:
10.1126/science.ado7088
发表日期:
2024-10-25
页码:
401-407
关键词:
electron-hole excitations
quantum dots
organometallic synthesis
optical-properties
GROWTH
gaas
gap
DECOMPOSITION
precursors
nucleation
摘要:
Colloidal quantum dots, with their size-tunable optoelectronic properties and scalable synthesis, enable applications in which inexpensive high-performance semiconductors are needed. Synthesis science breakthroughs have been key to the realization of quantum dot technologies, but important group III-group V semiconductors, including colloidal gallium arsenide (GaAs), still cannot be synthesized with existing approaches. The high-temperature molten salt colloidal synthesis introduced in this work enables the preparation of previously intractable colloidal materials. We directly nucleated and grew colloidal quantum dots in molten inorganic salts by harnessing molten salt redox chemistry and using surfactant additives for nanocrystal shape control. Synthesis temperatures above 425 degrees C are critical for realizing photoluminescent GaAs quantum dots, which emphasizes the importance of high temperatures enabled by molten salt solvents. We generalize the methodology and demonstrate nearly a dozen III-V solid-solution nanocrystal compositions that have not been previously reported.