Quadruple-band synglisis enables high thermoelectric efficiency in earth-abundant tin sulfide crystals

• 成果类型: Article
• 署名作者: Liu, Shan; Bai, Shulin; Wen, Yi; Lou, Jing; Jiang, Yongzhen; Zhu, Yingcai; Liu, Dongrui; Li, Yichen; Shi, Haonan; Liu, Shibo; Wang, Lei; Zheng, Junqing; Zhao, Zhe; Qin, Yongxin; Liu, ZhongKai; Gao, Xiang; Qin, Bingchao; Chang, Cheng; Chang, Chao; Zhao, Li-Dong
• 署名单位: Beihang University; Beihang University; Tianmushan Lab; ShanghaiTech University; Beihang University; Peking University
• 刊物名称: SCIENCE
• ISSN/ISSBN: 0036-8118
• DOI: 10.1126/science.ado1133
• 发表日期: 2025-01-10
• 页码: 202-208
• 关键词: low thermal-conductivity; power-generation; performance; sns; pbs; electron; charge; leads; zt

摘要

Thermoelectrics have been limited by the scarcity of their constituent elements, especially telluride. The earth-abundant, wide-bandgap (E-g approximate to 46 k(B)T) tin sulfide (SnS) has shown promising performance in its crystal form. We improved the thermoelectric efficiency in SnS crystals by promoting the convergence of energy and momentum of four valance bands, termed quadruple-band synglisis. We introduced more Sn vacancies to activate quadruple-band synglisis and facilitate carrier transport by inducing SnS2 in selenium (Se)-alloyed SnS, leading to a high dimensionless figure of merit (ZT) of similar to 1.0 at 300 kelvin and an average ZT of similar to 1.3 at 300 to 773 kelvin in p-type SnS crystals. We further obtained an experimental efficiency of similar to 6.5%, and our fabricated cooler demonstrated a maximum cooling temperature difference of similar to 48.4 kelvin at 353 kelvin. Our observations should draw interest to earth-abundant SnS crystals for applications of waste-heat recovery and thermoelectric cooling.