Two-dimensional indium selenide wafers for integrated electronics

• 成果类型: Article
• 署名作者: Qin, Biao; Jiang, Jianfeng; Wang, Lu; Guo, Quanlin; Zhang, Chenxi; Xu, Lin; Ni, Xing; Yin, Peng; Peng, Lian-Mao; Wang, Enge; Ding, Feng; Qiu, Chenguang; Liu, Can; Liu, Kaihui
• 署名单位: Peking University; Renmin University of China; Peking University; Peking University; Soochow University - China; Soochow University - China; Peking University; Peking University; Peking University; Tsinghua University; Collaborative Innovation Center of Quantum Matter; Suzhou Laboratory; Songshan Lake Materials Laboratory
• 刊物名称: SCIENCE
• ISSN/ISSBN: 0036-8088
• DOI: 10.1126/science.adu3803
• 发表日期: 2025-07-17
• 页码: 299-302
• 关键词: total-energy calculations; mobility; transistors; inse

摘要

Two-dimensional (2D) indium selenide, with its low effective mass, high thermal velocity, and exceptional electronic mobility, is a promising semiconductor for surpassing silicon electronics, but grown films have not achieved performance comparable with that of exfoliated micrometer-scale flakes. We report a solid-liquid-solid strategy that converts amorphous indium selenide films into pure-phase, high-crystallinity indium selenide wafers by creating an indium-rich liquid interface and maintaining a strict 1:1 stoichiometric ratio of indium to selenium. The as-obtained indium selenide films exhibit exceptional uniformity, a pure phase, and a high crystallinity across an entire similar to 5-centimeter wafer. Transistor arrays based on the produced indium selenide wafers demonstrate outstanding electronic performance surpassing that of all 2D film-based devices, including an extremely high mobility (averaging as high as 287 square centimeters per volt-second) and a near-Boltzmann-limit subthreshold swing (averaging as low as 67 millivolts per decade) at room temperature.