A complementary two-dimensional material-based one instruction set computer

• 成果类型: Article
• 署名作者: Ghosh, Subir; Zheng, Yikai; Rafiq, Musaib; Ravichandran, Harikrishnan; Sun, Yongwen; Chen, Chen; Goswami, Mrinmoy; Sakib, Najam U.; Sadaf, Muhtasim Ul Karim; Pannone, Andrew; Ray, Samriddha; Redwing, Joan M.; Yang, Yang; Sahay, Shubham; Das, Saptarshi
• 署名单位: Pennsylvania Commonwealth System of Higher Education (PCSHE); Pennsylvania State University; Pennsylvania State University - University Park; Indian Institute of Technology System (IIT System); Indian Institute of Technology (IIT) - Kanpur; Pennsylvania Commonwealth System of Higher Education (PCSHE); Pennsylvania State University; Pennsylvania State University - University Park; Jadavpur University; Pennsylvania Commonwealth System of Higher Education (PCSHE); Pennsylvania State University; Pennsylvania State University - University Park; Pennsylvania Commonwealth System of Higher Education (PCSHE); Pennsylvania State University; Pennsylvania State University - University Park; Pennsylvania Commonwealth System of Higher Education (PCSHE); Pennsylvania State University; Pennsylvania State University - University Park; Pennsylvania Commonwealth System of Higher Education (PCSHE); Pennsylvania State University; Pennsylvania State University - University Park
• 刊物名称: Nature
• ISSN/ISSBN: 0028-3304
• DOI: 10.1038/s41586-025-08963-7
• 发表日期: 2025-06-12
• 关键词: wse2; integration; insulators

摘要

Silicon has enabled advancements in semiconductor technology through miniaturization, but scaling challenges necessitate the exploration of new materials1. Two-dimensional (2D) materials, with their atomic thickness and high carrier mobility, offer a promising alternative2, 3, 4-5. Although significant progress has been made in wafer-scale growth6, 7-8, high-performance field-effect transistors9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19-20 and circuits based on 2D materials21, 22-23, achieving complementary metal-oxide-semiconductor (CMOS) integration remains a challenge. Here, we present a 2D one instruction set computer based on CMOS technology, leveraging the heterogeneous integration of large-area n-type MoS2 and p-type WSe2 field-effect transistors. By scaling the channel length, incorporating a high-kappa gate dielectric and optimizing material growth and device postprocessing, we tailored the threshold voltages for both n- and p-type 2D field-effect transistors, achieving high drive currents and reduced subthreshold leakage. This enabled circuit operation below 3 V with an operating frequency of up to 25 kHz, which was constrained by parasitic capacitances, along with ultra-low power consumption in the picowatt range and a switching energy as low as approximately 100 pJ. Finally, we projected the performance of the one instruction set computer and benchmarked it against state-of-the-art silicon technology using an industry-standard SPICE-compatible BSIM-BULK model. This model was calibrated with experimental data that incorporate device-to-device variations. Although further advances are needed, this work marks a significant milestone in the application of 2D materials to microelectronics.