Electrostatic-repulsion-based transfer of van der Waals materials

• 成果类型: Article
• 署名作者: Zheng, Xudong; Wang, Jiangtao; Jiang, Jianfeng; Zhang, Tianyi; Zhu, Jiadi; Dang, Tong; Wu, Peng; Lu, Ang-Yu; Chen, Ding-Rui; Yang, Tilo H.; Zhang, Xinyuan; Zhang, Kenan; Ma, Kyung Yeol; Wang, Zhien; Yao, Aijia; Liu, Haomin; Wan, Yi; Hsieh, Ya-Ping; Bulovic, Vladimir; Palacios, Tomas; Kong, Jing
• 署名单位: Massachusetts Institute of Technology (MIT); Academia Sinica - Taiwan; Massachusetts Institute of Technology (MIT); National University of Singapore
• 刊物名称: NATURE
• ISSN/ISSBN: 0028-0836; 1476-4687
• DOI: 10.1038/s41586-025-09510-0
• 发表日期: 2025-09-25
• 关键词: ISOELECTRIC POINTS; 2-dimensional materials; graphene; silicon; integration; adhesion; surface; BEHAVIOR; metals; films

摘要

Van der Waals (vdW) materials offer unique opportunities for 3D integration1,2 of planar circuits towards higher-density transistors and energy-efficient computation3, 4, 5, 6-7. Owing to the high thermal budget and special substrate requirement for the synthesis of high-quality vdW materials8, 9-10, an advanced transfer technique is required that can simultaneously meet a broad range of industrial requirements, including high intactness, cleanliness and speed, large scale, low cost and versatility. However, previous efforts based on either etching or etching-free mechanisms typically only improve one or two of the aforementioned aspects11, 12-13 and a comprehensive and systematic solution remains lacking. Here we demonstrate an electrostatic-repulsion-enabled advanced transfer technique that is etching free, high yield, fast, wafer scale, low cost and widely applicable, using ammonia solution compatible with the complementary metal-oxide-semiconductor (CMOS) industry. The high material intactness and interface cleanliness enable superior device performances in 2D field-effect transistors with 100% yield, near-zero hysteresis (7 mV) and near-ideal subthreshold swing (65.9 mV dec-1). The combination with bismuth contact further enables an ultrahigh on-current of 1.3 mA mu m-1 under 1 V bias. This advanced transfer approach offers a facile and manufacturing-viable solution for vdW-materials-based electronics, paving the way for advanced 3D integration in the future.