Room-temperature charge localization in ion-coupled bilayer transistors

• 成果类型: Article
• 署名作者: Gao, Mengyu; Hong, Hanyu; Fan, Sicheng; Chowdhury, Tomojit; Naqvi, Zehra; Ge, Jingyuan; Liang, Ce; Han, Yu; Guisinger, Nathan P.; Qiu, Yuqing; Kim, Dong Hyup; Vaikuntanathan, Suriyanarayanan; Liu, Chong; Park, Jiwoong
• 署名单位: University of Chicago; University of Chicago; University of Chicago; United States Department of Energy (DOE); Argonne National Laboratory
• 刊物名称: SCIENCE
• ISSN/ISSBN: 0036-8075; 1095-9203
• DOI: 10.1126/science.ady7969
• 发表日期: 2025-10-23
• 页码: 356-360
• 关键词: 2-DIMENSIONAL ELECTRON; dirac fermions; compressibility; enhancement

摘要

Controlling the localization of mobile charges in solids enables the discovery of correlated physical phenomena, but applying it for the development of next-generation electronics requires achieving such control under practical conditions. In this study, we report room-temperature, switchable charge localization in high-quality bilayer transistors that comprise a monolayer of molecular crystal on top of a monolayer semiconductor. By using an ion gate, we selectively populated either localized molecular states or semiconductor band states, achieving complete localization from mobile charges at densities up to 3 x 1013 per square centimeter. This transition was energetically stabilized by the formation of coupled electron-ion dipoles, which could be tuned through Coulomb engineering. These properties further enabled single-band ambipolar transistor operation without substitutional dopants, demonstrating the potential of electron-ion correlations for practical electronic applications.