Long-term stability in perovskite solar cells through atomic layer deposition of tin oxide

• 成果类型: Article
• 署名作者: Gao, Danpeng; Li, Bo; Liu, Qi; Zhang, Chunlei; Yu, Zexin; Li, Shuai; Gong, Jianqiu; Qian, Liangchen; Vanin, Francesco; Schutt, Kelly; Davis, Melissa A.; Palmstrom, Axel F.; Harvey, Steven P.; Long, Nicholas J.; Luther, Joseph M.; Zeng, Xiao Cheng; Zhu, Zonglong
• 署名单位: City University of Hong Kong; City University of Hong Kong; Imperial College London; United States Department of Energy (DOE); National Renewable Energy Laboratory - USA; City University of Hong Kong
• 刊物名称: SCIENCE
• ISSN/ISSBN: 0036-11610
• DOI: 10.1126/science.adq8385
• 发表日期: 2024-10-01
• 页码: 187-192
• 关键词: hole transport; GROWTH

摘要

Robust contact schemes that boost stability and simplify the production process are needed for perovskite solar cells (PSCs). We codeposited perovskite and hole-selective contact while protecting the perovskite to enable deposition of SnOx/Ag without the use of a fullerene. The SnOx, prepared through atomic layer deposition, serves as a durable inorganic electron transport layer. Tailoring the oxygen vacancy defects in the SnOx layer led to power conversion efficiencies (PCEs) of >25%. Our devices exhibit superior stability over conventional p-i-n PSCs, successfully meeting several benchmark stability tests. They retained >95% PCE after 2000 hours of continuous operation at their maximum power point under simulated AM1.5 illumination at 65 degrees C. Additionally, they boast a certified T-97 lifetime exceeding 1000 hours.