Homochiral carbon nanotube van der Waals crystals

• 成果类型: Article
• 署名作者: Zhang, Zhichun; Chen, Yi; Shen, Peiyue; Chen, Jiajun; Wang, Sen; Wang, Bo; Ma, Saiqun; Lyu, Bosai; Zhou, Xianliang; Lou, Shuo; Wu, Zhenghan; Xie, Yufeng; Zhang, Chengjia; Wang, Liguo; Xu, Kunqi; Li, Haonan; Wang, Guohua; Watanabe, Kenji; Taniguchi, Takashi; Qian, Dong; Jia, Jinfeng; Liang, Qi; Wang, Xiaoqun; Yang, Wei; Zhang, Guangyu; Jin, Chuanhong; Ouyang, Wengen; Shi, Zhiwen
• 署名单位: Shanghai Jiao Tong University; Shanghai Jiao Tong University; Wuhan University; Wuhan University; Zhejiang University; National Institute for Materials Science; National Institute for Materials Science; Nanjing University; Zhejiang University; Chinese Academy of Sciences; Songshan Lake Materials Laboratory; Shanghai Jiao Tong University
• 刊物名称: SCIENCE
• ISSN/ISSBN: 0036-12600
• DOI: 10.1126/science.adu1756
• 发表日期: 2025-03-21
• 关键词: aligned arrays; density; transistors; electronics; ropes

摘要

For applications of single-walled carbon nanotubes (SWNTs) in integrated circuits, it is crucial to have high-tube density arrays of SWNTs that are well aligned and purely semiconducting. In this work, we report on the direct growth of close-packed SWNT arrays on hexagonal boron nitride (hBN) substrates, demonstrating high alignment and uniform chirality within each array. Molecular dynamics simulations suggest that a self-assembly growth mechanism resulted from the intertube van der Waals attraction and the ultralow sliding friction of SWNTs on the atomically flat hBN substrate. Field-effect transistors constructed from the grown SWNT array exhibit high performance at room temperature, with mobilities of up to 2000 square centimeters per volt per second, on/off ratios of similar to 10(7), and a maximum current density of similar to 6 milliamperes per micrometer.