Three-dimensional integration of two-dimensional field-effect transistors
成果类型：
Article
署名作者：
Jayachandran, Darsith; Pendurthi, Rahul; Sadaf, Muhtasim Ul Karim; Sakib, Najam U.; Pannone, Andrew; Chen, Chen; Han, Ying; Trainor, Nicholas; Kumari, Shalini; Mc Knight, Thomas V.; Redwing, Joan M.; Yang, Yang; Das, Saptarshi
署名单位：
Pennsylvania Commonwealth System of Higher Education (PCSHE); Pennsylvania State University; Pennsylvania State University - University Park; Pennsylvania Commonwealth System of Higher Education (PCSHE); Pennsylvania State University; Pennsylvania State University - University Park; Pennsylvania Commonwealth System of Higher Education (PCSHE); Pennsylvania State University; Pennsylvania State University - University Park; Pennsylvania Commonwealth System of Higher Education (PCSHE); Pennsylvania State University; Pennsylvania State University - University Park; Pennsylvania Commonwealth System of Higher Education (PCSHE); Pennsylvania State University; Pennsylvania State University - University Park; Pennsylvania Commonwealth System of Higher Education (PCSHE); Pennsylvania State University; Pennsylvania State University - University Park
刊物名称：
Nature
ISSN/ISSBN：
0028-6206
DOI：
10.1038/s41586-023-06860-5
发表日期：
2024-01-11
页码：
276-281
关键词：
prospects
摘要：
In the field of semiconductors, three-dimensional (3D) integration not only enables packaging of more devices per unit area, referred to as 'More Moore'1 but also introduces multifunctionalities for 'More than Moore'2 technologies. Although silicon-based 3D integrated circuits are commercially available3-5, there is limited effort on 3D integration of emerging nanomaterials6,7 such as two-dimensional (2D) materials despite their unique functionalities7-10. Here we demonstrate (1) wafer-scale and monolithic two-tier 3D integration based on MoS2 with more than 10,000 field-effect transistors (FETs) in each tier; (2) three-tier 3D integration based on both MoS2 and WSe2 with about 500 FETs in each tier; and (3) two-tier 3D integration based on 200 scaled MoS2 FETs (channel length, LCH = 45 nm) in each tier. We also realize a 3D circuit and demonstrate multifunctional capabilities, including sensing and storage. We believe that our demonstrations will serve as the foundation for more sophisticated, highly dense and functionally divergent integrated circuits with a larger number of tiers integrated monolithically in the third dimension. Monolithic three-dimensional integration of two-dimensional field-effect transistors enables improved integration density and multifunctionality to realize 'More Moore' and 'More than Moore' technologies.