Fractional quantum anomalous Hall effect in multilayer graphene

• 成果类型: Article
• 署名作者: Lu, Zhengguang; Han, Tonghang; Yao, Yuxuan; Reddy, Aidan P.; Yang, Jixiang; Seo, Junseok; Watanabe, Kenji; Taniguchi, Takashi; Fu, Liang; Ju, Long
• 署名单位: Massachusetts Institute of Technology (MIT); National Institute for Materials Science; National Institute for Materials Science
• 刊物名称: Nature
• ISSN/ISSBN: 0028-4195
• DOI: 10.1038/s41586-023-07010-7
• 发表日期: 2024-02-22
• 关键词: chern insulators; wigner crystal; band-gap; transport; statistics; STATES; mott

摘要

The fractional quantum anomalous Hall effect (FQAHE), the analogue of the fractional quantum Hall effect(1) at zero magnetic field, is predicted to exist in topological flat bands under spontaneous time-reversal-symmetry breaking(2,3,4,5,6). The demonstration of FQAHE could lead to non-Abelian anyons that form the basis of topological quantum computation(7,8,9). So far, FQAHE has been observed only in twisted MoTe2 at a moire filling factor v > 1/2 (refs. (10,11,12,13)). Graphene-based moire superlattices are believed to host FQAHE with the potential advantage of superior material quality and higher electron mobility. Here we report the observation of integer and fractional QAH effects in a rhombohedral pentalayer graphene-hBN moire superlattice. At zero magnetic field, we observed plateaus of quantized Hall resistance R-xy = h/ve(2) at v = 1, 2/3, 3/5, 4/7, 4/9, 3/7 and 2/5 of the moire superlattice, respectively, accompanied by clear dips in the longitudinal resistance R-xx. R-xy equals 2h/e(2) at v = 1/2 and varies linearly with v, similar to the composite Fermi liquid in the half-filled lowest Landau level at high magnetic fields(14,15,16). By tuning the gate-displacement field D and v, we observed phase transitions from composite Fermi liquid and FQAH states to other correlated electron states. Our system provides an ideal platform for exploring charge fractionalization and (non-Abelian) anyonic braiding at zero magnetic field(7,8,9,17,18,19), especially considering a lateral junction between FQAHE and superconducting regions in the same device(20,21,22).