High-speed and large-scale intrinsically stretchable integrated circuits

• 成果类型: Article
• 署名作者: Zhong, Donglai; Wu, Can; Jiang, Yuanwen; Yuan, Yujia; Kim, Min-gu; Nishio, Yuya; Shih, Chien-Chung; Wang, Weichen; Lai, Jian-Cheng; Ji, Xiaozhou; Gao, Theodore Z.; Wang, Yi-Xuan; Xu, Chengyi; Zheng, Yu; Yu, Zhiao; Gong, Huaxin; Matsuhisa, Naoji; Zhao, Chuanzhen; Lei, Yusheng; Liu, Deyu; Zhang, Song; Ochiai, Yuto; Liu, Shuhan; Wei, Shiyuan; Tok, Jeffrey B. -H.; Bao, Zhenan
• 署名单位: Stanford University; Stanford University; Stanford University; Tianjin University; Stanford University; Yonsei University; Yonsei University Health System; National Yunlin University Science & Technology; University of Tokyo
• 刊物名称: Nature
• ISSN/ISSBN: 0028-5501
• DOI: 10.1038/s41586-024-07096-7
• 发表日期: 2024-03-14
• 关键词: hematopoietic stem-cells; clonal dynamics; polymer; electronics; mutations; rare; transcription; quiescence; frequency; fates

摘要

Intrinsically stretchable electronics with skin-like mechanical properties have been identified as a promising platform for emerging applications ranging from continuous physiological monitoring to real-time analysis of health conditions, to closed-loop delivery of autonomous medical treatment1-7. However, current technologies could only reach electrical performance at amorphous-silicon level (that is, charge-carrier mobility of about 1 cm2 V-1 s-1), low integration scale (for example, 54 transistors per circuit) and limited functionalities8-11. Here we report high-density, intrinsically stretchable transistors and integrated circuits with high driving ability, high operation speed and large-scale integration. They were enabled by a combination of innovations in materials, fabrication process design, device engineering and circuit design. Our intrinsically stretchable transistors exhibit an average field-effect mobility of more than 20 cm2 V-1 s-1 under 100% strain, a device density of 100,000 transistors per cm2, including interconnects and a high drive current of around 2 mu A mu m-1 at a supply voltage of 5 V. Notably, these achieved parameters are on par with state-of-the-art flexible transistors based on metal-oxide, carbon nanotube and polycrystalline silicon materials on plastic substrates12-14. Furthermore, we realize a large-scale integrated circuit with more than 1,000 transistors and a stage-switching frequency greater than 1 MHz, for the first time, to our knowledge, in intrinsically stretchable electronics. Moreover, we demonstrate a high-throughput braille recognition system that surpasses human skin sensing ability, enabled by an active-matrix tactile sensor array with a record-high density of 2,500 units per cm2, and a light-emitting diode display with a high refreshing speed of 60 Hz and excellent mechanical robustness. The above advancements in device performance have substantially enhanced the abilities of skin-like electronics. High-density, intrinsically stretchable transistors with high driving ability and integrated circuits with high operation speed and large-scale integration were enabled by a combination of innovations in materials, fabrication process design, device engineering and circuit design.