Bevel-edge epitaxy of ferroelectric rhombohedral boron nitride single crystal

• 成果类型: Article
• 署名作者: Wang, Li; Qi, Jiajie; Wei, Wenya; Wu, Mengqi; Zhang, Zhibin; Li, Xiaomin; Sun, Huacong; Guo, Quanlin; Cao, Meng; Wang, Qinghe; Zhao, Chao; Sheng, Yuxuan; Liu, Zhetong; Liu, Can; Wu, Muhong; Xu, Zhi; Wang, Wenlong; Hong, Hao; Gao, Peng; Wu, Menghao; Wang, Zhu-Jun; Xu, Xiaozhi; Wang, Enge; Ding, Feng; Zheng, Xiaorui; Liu, Kaihui; Bai, Xuedong
• 署名单位: Chinese Academy of Sciences; Institute of Physics, CAS; Peking University; South China Normal University; Westlake University; Chinese Academy of Sciences; University of Chinese Academy of Sciences, CAS; Chinese Academy of Sciences; Shenzhen Institute of Advanced Technology, CAS; Huazhong University of Science & Technology; Peking University; Tsinghua University; Collaborative Innovation Center of Quantum Matter; Renmin University of China; Peking University; Peking University; Songshan Lake Materials Laboratory; ShanghaiTech University
• 刊物名称: Nature
• ISSN/ISSBN: 0028-4170
• DOI: 10.1038/s41586-024-07286-3
• 发表日期: 2024-05-02
• 页码: 74-79
• 关键词: growth; graphene; monolayer; bilayer; film

摘要

Within the family of two-dimensional dielectrics, rhombohedral boron nitride (rBN) is considerably promising owing to having not only the superior properties of hexagonal boron nitride1-4-including low permittivity and dissipation, strong electrical insulation, good chemical stability, high thermal conductivity and atomic flatness without dangling bonds-but also useful optical nonlinearity and interfacial ferroelectricity originating from the broken in-plane and out-of-plane centrosymmetry5-23. However, the preparation of large-sized single-crystal rBN layers remains a challenge24-26, owing to the requisite unprecedented growth controls to coordinate the lattice orientation of each layer and the sliding vector of every interface. Here we report a facile methodology using bevel-edge epitaxy to prepare centimetre-sized single-crystal rBN layers with exact interlayer ABC stacking on a vicinal nickel surface. We realized successful accurate fabrication over a single-crystal nickel substrate with bunched step edges of the terrace facet (100) at the bevel facet (110), which simultaneously guided the consistent boron-nitrogen bond orientation in each BN layer and the rhombohedral stacking of BN layers via nucleation near each bevel facet. The pure rhombohedral phase of the as-grown BN layers was verified, and consequently showed robust, homogeneous and switchable ferroelectricity with a high Curie temperature. Our work provides an effective route for accurate stacking-controlled growth of single-crystal two-dimensional layers and presents a foundation for applicable multifunctional devices based on stacked two-dimensional materials. Centimetre-sized single-crystal rhombohedral boron nitride layers are achieved through bevel-edge epitaxy, and the resulting material exhibits robust, homogeneous and switchable ferroelectricity with a high Curie temperature.