Selenium-alloyed tellurium oxide for amorphous p-channel transistors

• 成果类型: Article
• 署名作者: Liu, Ao; Kim, Yong-Sung; Kim, Min Gyu; Reo, Youjin; Zou, Taoyu; Choi, Taesu; Bai, Sai; Zhu, Huihui; Noh, Yong-Young
• 署名单位: University of Electronic Science & Technology of China; Pohang University of Science & Technology (POSTECH); Northwestern University; Korea Research Institute of Standards & Science (KRISS); University of Science & Technology (UST); Pohang University of Science & Technology (POSTECH); University of Electronic Science & Technology of China
• 刊物名称: Nature
• ISSN/ISSBN: 0028-6980
• DOI: 10.1038/s41586-024-07360-w
• 发表日期: 2024-05-23
• 页码: 798-802
• 关键词: thin-film transistors; high-performance; fabrication

摘要

Compared to polycrystalline semiconductors, amorphous semiconductors offer inherent cost-effective, simple and uniform manufacturing. Traditional amorphous hydrogenated Si falls short in electrical properties, necessitating the exploration of new materials. The creation of high-mobility amorphous n-type metal oxides, such as a-InGaZnO (ref. 1), and their integration into thin-film transistors (TFTs) have propelled advancements in modern large-area electronics and new-generation displays(2-8). However, finding comparable p-type counterparts poses notable challenges, impeding the progress of complementary metal-oxide-semiconductor technology and integrated circuits(9-11). Here we introduce a pioneering design strategy for amorphous p-type semiconductors, incorporating high-mobility tellurium within an amorphous tellurium suboxide matrix, and demonstrate its use in high-performance, stable p-channel TFTs and complementary circuits. Theoretical analysis unveils a delocalized valence band from tellurium 5p bands with shallow acceptor states, enabling excess hole doping and transport. Selenium alloying suppresses hole concentrations and facilitates the p-orbital connectivity, realizing high-performance p-channel TFTs with an average field-effect hole mobility of around 15 cm(2) V-1 s(-1) and on/off current ratios of 10(6)-10(7), along with wafer-scale uniformity and long-term stabilities under bias stress and ambient ageing. This study represents a crucial stride towards establishing commercially viable amorphous p-channel TFT technology and complementary electronics in a low-cost and industry-compatible manner.