Room-temperature spin injection across a chiral perovskite/III-V interface

• 成果类型: Article
• 署名作者: Hautzinger, Matthew P.; Pan, Xin; Hayden, Steven C.; Ye, Jiselle Y.; Jiang, Qi; Wilson, Mickey J.; Phillips, Alan J.; Dong, Yifan; Raulerson, Emily K.; Leahy, Ian A.; Jiang, Chun-Sheng; Blackburn, Jeffrey L.; Luther, Joseph M.; Lu, Yuan; Jungjohann, Katherine; Vardeny, Z. Valy; Berry, Joseph J.; Alberi, Kirstin; Beard, Matthew C.
• 署名单位: United States Department of Energy (DOE); National Renewable Energy Laboratory - USA; Utah System of Higher Education; University of Utah; Colorado School of Mines; University of Colorado System; University of Colorado Boulder; Centre National de la Recherche Scientifique (CNRS); CNRS - Institute of Chemistry (INC); Universite de Lorraine; University of Colorado System; University of Colorado Boulder
• 刊物名称: Nature
• ISSN/ISSBN: 0028-4826
• DOI: 10.1038/s41586-024-07560-4
• 发表日期: 2024-07-11
• 关键词: polarized light; solar-cells; electroluminescence; magnetoresistance; SCATTERING

摘要

Spin accumulation in semiconductor structures at room temperature and without magnetic fields is key to enable a broader range of optoelectronic functionality1. Current efforts are limited owing to inherent inefficiencies associated with spin injection across semiconductor interfaces2. Here we demonstrate spin injection across chiral halide perovskite/III-V interfaces achieving spin accumulation in a standard semiconductor III-V (AlxGa1-x)0.5In0.5P multiple quantum well light-emitting diode. The spin accumulation in the multiple quantum well is detected through emission of circularly polarized light with a degree of polarization of up to 15 +/- 4%. The chiral perovskite/III-V interface was characterized with X-ray photoelectron spectroscopy, cross-sectional scanning Kelvin probe force microscopy and cross-sectional transmission electron microscopy imaging, showing a clean semiconductor/semiconductor interface at which the Fermi level can equilibrate. These findings demonstrate that chiral perovskite semiconductors can transform well-developed semiconductor platforms into ones that can also control spin. By using a chiral halide perovskite material, spin injection at room temperature into a conventional III-V semiconductor multiple quantum well light-emitting diode is demonstrated, resulting in a semiconductor platform that can also control spin.