Hypotaxy of wafer-scale single-crystal transition metal dichalcogenides

• 成果类型: Article
• 署名作者: Moon, Donghoon; Lee, Wonsik; Lim, Chaesung; Kim, Jinwoo; Kim, Jiwoo; Jung, Yeonjoon; Choi, Hyun-Young; Choi, Won Seok; Kim, Hangyel; Baek, Ji-Hwan; Kim, Changheon; Joo, Jaewoong; Oh, Hyun-Geun; Jang, Hajung; Watanabe, Kenji; Taniguchi, Takashi; Bae, Sukang; Son, Jangyup; Ryu, Huije; Kwon, Junyoung; Cheong, Hyeonsik; Han, Jeong Woo; Jang, Hyejin; Lee, Gwan-Hyoung
• 署名单位: Seoul National University (SNU); Seoul National University (SNU); Korea Institute of Science & Technology (KIST); Sogang University; National Institute for Materials Science; National Institute for Materials Science; Jeonbuk National University; Korea Institute of Science & Technology (KIST); University of Science & Technology (UST); Samsung; Samsung Electronics
• 刊物名称: Nature
• ISSN/ISSBN: 0028-1449
• DOI: 10.1038/s41586-024-08492-9
• 发表日期: 2025-02-27
• 关键词: vapor-phase growth; grain-boundaries; 2-dimensional materials; mos2; graphene; layers

摘要

Two-dimensional (2D) semiconductors, particularly transition metal dichalcogenides (TMDs), are promising for advanced electronics beyond silicon1, 2-3. Traditionally, TMDs are epitaxially grown on crystalline substrates by chemical vapour deposition. However, this approach requires post-growth transfer to target substrates, which makes controlling thickness and scalability difficult. Here we introduce a method called hypotaxy ('hypo' meaning downward and 'taxy' meaning arrangement), which enables wafer-scale single-crystal TMD growth directly on various substrates, including amorphous and lattice-mismatched substrates, while preserving crystalline alignment with an overlying 2D template. By sulfurizing or selenizing a pre-deposited metal film under graphene, aligned TMD nuclei form, coalescing into a single-crystal film as graphene is removed. This method achieves precise MoS2 thickness control from monolayer to hundreds of layers on diverse substrates, producing 4-inch single-crystal MoS2 with high thermal conductivity (about 120 W m-1 K-1) and mobility (around 87 cm2 V-1 s-1). Furthermore, nanopores created in graphene using oxygen plasma treatment allow MoS2 growth at a lower temperature of 400 degrees C, compatible with back-end-of-line processes. This hypotaxy approach extends to other TMDs, such as MoSe2, WS2 and WSe2, offering a solution to substrate limitations in conventional epitaxy and enabling wafer-scale TMDs for monolithic three-dimensional integration.