Subnanosecond flash memory enabled by 2D-enhanced hot-carrier injection

• 成果类型: Article
• 署名作者: Xiang, Yutong; Wang, Chong; Liu, Chunsen; Wang, Tanjun; Jiang, Yongbo; Wang, Yang; Wang, Shuiyuan; Zhou, Peng
• 署名单位: Fudan University
• 刊物名称: Nature
• ISSN/ISSBN: 0028-2265
• DOI: 10.1038/s41586-025-08839-w
• 发表日期: 2025-05-01
• 关键词: technologies; degradation; graphene; eeprom; dram; soi

摘要

The pursuit of non-volatile memory with program speeds below one nanosecond, beyond the capabilities of non-volatile flash and high-speed volatile static random-access memory, remains a longstanding challenge in the field of memory technology1. Utilizing fundamental physics innovation enabled by advanced materials, series of emerging memories2, 3, 4-5 are being developed to overcome the speed bottleneck of non-volatile memory. As the most extensively applied non-volatile memory, the speed of flash is limited by the low efficiency of the electric-field-assisted program, with reported speeds6, 7, 8, 9-10 much slower than sub-one nanosecond. Here we report a two-dimensional Dirac graphene-channel flash memory based on a two-dimensional-enhanced hot-carrier-injection mechanism, supporting both electron and hole injection. The Dirac channel flash shows a program speed of 400 picoseconds, non-volatile storage and robust endurance over 5.5 x 106 cycles. Our results confirm that the thin-body channel can optimize the horizontal electric-field (Ey) distribution, and the improved Ey-assisted program efficiency increases the injection current to 60.4 pA mu m-1 at |VDS| = 3.7 V. We also find that the two-dimensional semiconductor tungsten diselenide has two-dimensional-enhanced hot-hole injection, but with different injection behaviour. This work demonstrates that the speed of non-volatile flash memory can exceed that of the fastest volatile static random-access memory with the same channel length.