Light-triggered regionally controlled n-doping of organic semiconductors

• 成果类型: Article
• 署名作者: Wang, Xin-Yi; Ding, Yi-Fan; Zhang, Xiao-Yan; Zhou, Yang-Yang; Pan, Chen-Kai; Li, Yuan-He; Liu, Nai-Fu; Yao, Ze-Fan; Chen, Yong-Shi; Xie, Zhi-Hao; Huang, Yi-Fan; Xu, Yu-Chun; Wu, Hao-Tian; Huang, Chun-Xi; Xiong, Miao; Ding, Li; Yu, Zi-Di; Li, Qi-Yi; Zheng, Yu-Qing; Wang, Jie-Yu; Pei, Jian
• 署名单位: Peking University; Peking University
• 刊物名称: Nature
• ISSN/ISSBN: 0028-2829
• DOI: 10.1038/s41586-025-09075-y
• 发表日期: 2025-06-19
• 关键词: thin-films; physics; device; dopant

摘要

Doping is a primary method to modulate the electrical properties of semiconductors, enabling the fabrication of various homojunctions/heterojunctions and complex devices1, 2, 3, 4, 5, 6, 7-8. For organic semiconductors (OSCs), the electrical performance has been extensively improved by developing doping methods and dopants9, 10, 11, 12-13. However, compared with the state-of-the-art spatial resolution of inorganic semiconductor fabrication processes, OSCs lag far behind, limiting the construction of complex organic electronic devices5. Here we present a facile light-triggered doping strategy and develop a series of inactive photoactivable dopants (iPADs) for regionally controlled n-doping of OSCs. By converting iPADs into active dopants through ultraviolet (UV) exposure, controllable doping of various n-type OSCs with high electrical conductivity greater than 30 S cm-1 has been realized. Using iPADs can substantially improve the performances of OSCs in transistors, logic circuits and thermoelectrics. Also, regionally controlled doping is demonstrated in OSCs with a record resolution down to 1 mu m. Overall, our strategy has achieved tunable doping levels in OSCs with high spatial resolution, which is expected to be highly suited for integrated circuits in both roll-to-roll and laboratory-scale environments.